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SS Bar Semiconductor Strain Gages
Piezo-Metrics SS-Bar semiconductor strain gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape, thus eliminating molecular dislocation or cracks, thereby optimizing performance.
Key Specifications
- Available gage lengths: from 0.027 to 0.250 in. long
- Gage resistance: from 15 Ohm's to 1150 Ohm's
- Operating strain: +/-2000u inch/inch (+/-3000u inch/inch max.)
- Typical Gage Factor: from 85 to 175
- Typical TCR: from 6 to 30%/100°F
- Linearity: better than 0.25%
- gage set matching: up to 16 gages
- Individual gage test data: available
- Custom gage lead forming: available – consult factory